A Two-Dimensional MoS<sub>2</sub> Catalysis Transistor by Solid-State Ion Gating Manipulation and Adjustment (SIGMA).

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作者： Yecun,Wu ^[1] ; Stefan,Ringe ^[2] ; Chun-Lan,Wu ^[3] ; Wei,Chen ^[4] ; Ankun,Yang ^[4] ; Hao,Chen ^[4] ; Michael,Tang ^[4] ; Guangmin,Zhou ^[2] ; Harold Y,Hwang ^[3] ; Karen,Chan ^[4] ; Yi,Cui ^[5]

作者单位： Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States. ^[1] SUNCAT Center for Interface Science and Catalysis , Stanford University , Stanford , California 94305 , United States. ^[2] SUNCAT Center for Interface Science and Catalysis , SLAC National Accelerator Laboratory , Menlo Park , California 94025 , United States. ^[3] Department of Materials Science and Engineering , Stanford University , Stanford , California 94305 , United States. ^[4] Department of Applied Physics , Stanford University , Stanford , California 94305 , United States. ^[5] Stanford Institute for Materials and Energy Science , SLAC National Accelerator Laboratory , Menlo Park , California 94025 United States. ^[6] CatTheory Center, Department of Physics , Technical University of Denmark , Kongens Lyngby 2800 , Denmark. ^[7]

关键词 Catalysis transistor electrocatalysis solid-state ion gating two-dimensional materials

DOI 10.1021/acs.nanolett.9b02888

PMID 31499003

发布时间 2020-09-30

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