Ultra-thin Ga nanosheets: analogues of high pressure Ga(iii).

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第一作者： Yaqi,Li

第一单位： School of Physics, Beihang University, Beijing 100191, P. R. China.

作者： Yaqi,Li ^[1] ; Jingwei,Zhang ^[1] ; Fanxing,Yin ^[1] ; Yuqing,Wang ^[1] ; Haifeng,Feng ^[2] ; Si,Zhou ^[3] ; Yi,Du ^[2]

作者单位： School of Physics, Beihang University, Beijing 100191, P. R. China. ^[1] School of Physics, Beihang University, Beijing 100191, P. R. China and BUAA-UOW Joint Research Centre, Beihang University, Beijing 100191, P. R. China. ydu@uow.edu.au haifeng@uow.edu.au and Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovative Materials (AIIM), University of Wollongong, Wollongong, NSW 2500, Australia. ^[2] Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovative Materials (AIIM), University of Wollongong, Wollongong, NSW 2500, Australia. ^[3]

DOI 10.1039/c9nr05597e

PMID 31528941

发布时间 2019-09-26

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Nanoscale

2019年11卷37期

17201-17205页

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Ultra-thin Ga nanosheets: analogues of high pressure Ga(iii).

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Ultra-thin Ga nanosheets: analogues of high pressure Ga(iii).

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