Realization of Self-Compliance Resistive Switching Memory via Tailoring Interfacial Oxygen.

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作者： Haizhong,Zhang ^[1] ; Xin,Ju ^[1] ; Yu,Zhou ^[1] ; Chenjie,Gu ^[2] ; Jisheng,Pan ^[3] ; Diing Shenp,Ang ^[1]

作者单位： School of Electrical and Electronic Engineering , Nanyang Technological University , 50 Nanyang Avenue , Singapore 639798. ^[1] Division of Microelectronics Science and Engineering, School of Science , Ningbo University , Ningbo 315211 , China. ^[2] Institute of Materials Researc h and Engineering, A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way, Innovis, #08-03 , Singapore 138634. ^[3]

关键词 hafnium oxide interface engineering resistive switching memory selector-less memory self-compliance switching

DOI 10.1021/acsami.9b11772

PMID 31597415

发布时间 2019-11-13

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