Resistive Switching and Charge Transport in Laser-Fabricated Graphene Oxide Memristors: A Time Series and Quantum Point Contact Modeling Approach.

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作者： N,Rodriguez ^[1] ; D,Maldonado ^[2] ; F J,Romero ^[1] ; F J,Alonso ^[1] ; A M,Aguilera ^[2] ; A,Godoy ^[3] ; F,Jimenez-Molinos ^[3] ; F G,Ruiz ^[1] ; J B,Roldan ^[2]

作者单位： Department of Electronics and Computer Technology, Science Faculty, University of Granada, Av. Fuentenueva s/n, 18071 Granada, Spain. ^[1] Pervasive Electronics Advanced Research Laboratory, University of Granada, 18071 Granada, Spain. ^[2] Department of Statistics and Operations Research, Science Faculty, University of Granada, Av. Fuentenueva s/n, 18071 Granada, Spain. ^[3]

关键词 RRAM autocovariance graphene oxide laser memristor time series modeling variability

DOI 10.3390/ma12223734

PMID 31766105

发布时间 2020-09-28

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