P-type Doping in Large-Area Monolayer MoS<sub>2</sub> by Chemical Vapor Deposition.

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第一作者： Mengge,Li

第一单位： Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials , Zhejiang University , Hangzhou 310027 , P. R. China.

作者： Mengge,Li ^[1] ; Jiadong,Yao ^[1] ; Xiaoxiang,Wu ^[1] ; Shucheng,Zhang ^[1] ; Boran,Xing ^[1] ; Xinyue,Niu ^[1] ; Xiaoyuan,Yan ^[1] ; Ying,Yu ^[1] ; Yali,Liu ^[1] ; Yewu,Wang ^[1]

作者单位： Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials , Zhejiang University , Hangzhou 310027 , P. R. China. ^[1] Collaborative Innovation Centre of Advanced Microstructures , Nanjing University , Nanjing 210093 , P. R. China. ^[2]

关键词 CVD DFT calculation MoS2 ambipolar substitutional doping

DOI 10.1021/acsami.9b19864

PMID 31937099

发布时间 2020-02-07

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