The High Anisotropy of the Epitaxial Growth of the Well-Aligned Sb<sub>2</sub>Se<sub>3</sub> Nanoribbons on Mica.

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第一作者： Jinyang,Liu

第一单位： College of Physics and Energy , Fujian Normal University , Fuzhou 350117 , P. R. China.

作者： Jinyang,Liu ^[1] ; Mingling,Li ^[2] ; Mengyu,Liu ^[3] ; Hongbing,Cai ^[4] ; Yue,Lin ^[5] ; Yuhan,Zhou ^[1] ; Zhigao,Huang ^[5] ; Fachun,Lai ^[6]

作者单位： College of Physics and Energy , Fujian Normal University , Fuzhou 350117 , P. R. China. ^[1] Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials , Fuzhou 350117 , P. R. China. ^[2] Fujian Provincial Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices , Xiamen 361005 , P. R. China. ^[3] Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage , Fuzhou 350117 , China. ^[4] Hefei National Laboratory for Physical Science at the Microscale , University of Science and Technology of China , Hefei 230026 , Anhui , P. R. China. ^[5] Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , Singapore 637371 , Singapore. ^[6]

关键词 Sb2Se3 nanoribbons anisotropic photodetectors heteroepitaxial growth rapid physical vapor deposition well-aligned

DOI 10.1021/acsami.9b20142

PMID 32009379

发布时间 2020-02-27

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