Controlling the Facet of ZnO during Wet Chemical Etching Its (000 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mover><mml:mn>1</mml:mn><mml:mo>¯</mml:mo></mml:mover></mml:mrow></mml:math> ) O-Terminated Surface.

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作者： Mei,Sun ^[1] ; Bocheng,Yu ^[2] ; Mengyu,Hong ^[3] ; Zhiwei,Li ^[1] ; Fengjiao,Lyu ^[1] ; Xing,Li ^[4] ; Zhihong,Li ^[2] ; Xianlong,Wei ^[1] ; Zheng,Zhang ^[3] ; Yue,Zhang ^[3] ; Qing,Chen ^[1]

作者单位： Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing, 100871, China. ^[1] National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Institute of Microelectronics, Peking University, Beijing, 100871, China. ^[2] Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, China. ^[3] Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China. ^[4]

关键词 O2 plasma treatment ZnO nano/micro belts facet control high-index crystal facets in situ liquid cell TEM micromasking wet chemical etching

DOI 10.1002/smll.201906435

PMID 32108429

发布时间 2020-12-22

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