On-Chip TaO x -Based Non-volatile Resistive Memory for in vitro Neurointerfaces.

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作者： Maksim,Zhuk ^[1] ; Sergei,Zarubin ^[1] ; Igor,Karateev ^[2] ; Yury,Matveyev ^[3] ; Evgeny,Gornev ^[4] ; Gennady,Krasnikov ^[4] ; Dmitiry,Negrov ^[5] ; Andrei,Zenkevich ^[1]

作者单位： Laboratory of Functional Materials and Devices for Nanoelectronics, Moscow Institute of Physics and Technology, Moscow, Russia. ^[1] National Research Center, Kurchatov Institute, Moscow, Russia. ^[2] Deutsches Elektronen-Synchrotron, Hamburg, Germany. ^[3] Molecular Electronics Research Institute (MERI), Moscow, Russia. ^[4] Laboratory of Neurocomputing Systems, Moscow Institute of Physics and Technology, Moscow, Russia. ^[5]

关键词 1T-1R device back-end-of-line process high-density microelectrode arrays in vitro neurointerfaces neural tissue non-volatile memory resistive switching tantalum oxide

DOI 10.3389/fnins.2020.00094

PMID 32174805

发布时间 2020-09-28

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Frontiers in neuroscience

2020年14卷

94页

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On-Chip TaO <i><sub>x</sub></i> -Based Non-volatile Resistive Memory for <i>in vitro</i> Neurointerfaces.

Frontiers in neuroscience

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On-Chip TaO <i><sub>x</sub></i> -Based Non-volatile Resistive Memory for <i>in vitro</i> Neurointerfaces.

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