Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs.

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第一作者： Zhaoxia,Bi

第一单位： Division of Solid State Physics, Department of Physics, Lund University, Box 118, S-221 00 Lund, Sweden.

作者： Zhaoxia,Bi ^[1] ; Taiping,Lu ^[2] ; Jovana,Colvin ^[1] ; Elis,Sjögren ^[2] ; Neimantas,Vainorius ^[3] ; Anders,Gustafsson ^[2] ; Jonas,Johansson ^[4] ; Rainer,Timm ^[5] ; Filip,Lenrick ^[1] ; Reine,Wallenberg ^[2] ; Bo,Monemar ^[1] ; Lars,Samuelson ^[2]

作者单位： Division of Solid State Physics, Department of Physics, Lund University, Box 118, S-221 00 Lund, Sweden. ^[1] NanoLund, Lund University, Box 118, S-221 00 Lund, Sweden. ^[2] RISE Research Institutes of Sweden AB, 22370 Lund, Sweden. ^[3] Division of Synchrotron Radiation Research, Department of Physics, Lund University, Box 118, S-221 00 Lund, Sweden. ^[4] Department of Mechanical Engineering, Lund University, Box 118, S-221 00 Lund, Sweden. ^[5] Center for Analysis and Synthesis/nCHREM, Lund University, Box 124, S-221 00 Lund, Sweden. ^[6]

关键词 InGaN chemical mechanical polishing micro-LEDs selective area growth template vapor phase epitaxy

DOI 10.1021/acsami.0c00951

PMID 32207292

发布时间 2020-06-25

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