Designer Topological Insulator with Enhanced Gap and Suppressed Bulk Conduction in Bi2Se3/Sb2Te3 Ultrashort-Period Superlattices.

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第一作者： Ido,Levy

第一单位： Department of Chemistry, The City College of New York, New York, New York 10031, United States.

作者： Ido,Levy ^[1] ; Cody,Youmans ^[2] ; Thor Axtmann,Garcia ^[3] ; Haiming,Deng ^[4] ; Steven,Alsheimer ^[1] ; Christophe,Testelin ^[2] ; Lia,Krusin-Elbaum ^[3] ; Pouyan,Ghaemi ^[4] ; Maria C,Tamargo ^[3]

作者单位： Department of Chemistry, The City College of New York, New York, New York 10031, United States. ^[1] Chemistry Program, Graduate Center of CUNY, New York, New York 10021, United States. ^[2] Department of Physics, The City College of New York, New York, New York 10031, United States. ^[3] Physics Program, Graduate Center of CUNY, New York, New York 10021, United States. ^[4] Sorbonne Université, CNRS, Institut des NanoSciences de Paris, F-75005 Paris, France. ^[5]

关键词 Bi2Se3 Sb2Te3 gap enhancement molecular beam epitaxy superlattice topological insulator

DOI 10.1021/acs.nanolett.0c00338

PMID 32315190

发布时间 2020-09-30

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