Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications.

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第一作者： Furqan,Zahoor

第一单位： Department of Electrical and Electronics Engineering, Universiti Teknologi Petronas, Seri Iskandar, Perak, 32610, Malaysia.

作者： Furqan,Zahoor ^[1] ; Tun Zainal,Azni Zulkifli ^[2] ; Farooq Ahmad,Khanday ^[3]

作者单位： Department of Electrical and Electronics Engineering, Universiti Teknologi Petronas, Seri Iskandar, Perak, 32610, Malaysia. ^[1] Department of Electrical and Electronics Engineering, Universiti Teknologi Petronas, Seri Iskandar, Perak, 32610, Malaysia. zainal.zulkifli@utp.edu.my. ^[2] P.G. Department of Electronics and Instrumentation Technology, University of Kashmir, Srinagar, Jammu and Kashmir, 190005, India. ^[3]

关键词 Emerging memory Multilevel cell (MLC)Non-volatile storage Oxygen vacancies Resistance switching Resistive random access memory (RRAM)

DOI 10.1186/s11671-020-03299-9

PMID 32323059

发布时间 2024-03-28

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