Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene.

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作者： Gang,Qiu ^[1] ; Chang,Niu ^[2] ; Yixiu,Wang ^[1] ; Mengwei,Si ^[2] ; Zhuocheng,Zhang ^[3] ; Wenzhuo,Wu ^[1] ; Peide D,Ye ^[2]

作者单位： School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA. ^[1] Birck Nanotechnology Centre, Purdue University, West Lafayette, IN, USA. ^[2] School of Industrial Engineering, Purdue University, West Lafayette, IN, USA. ^[3] School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA. yep@purdue.edu. ^[4] Birck Nanotechnology Centre, Purdue University, West Lafayette, IN, USA. yep@purdue.edu. ^[5]

DOI 10.1038/s41565-020-0715-4

PMID 32601448

发布时间 2021-01-15

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Nature nanotechnology

2020年15卷7期

585-591页

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Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene.

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Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene.

Nature nanotechnology

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