Characterization of Impact Ionization Coefficient of ZnO Based on a p-Si/i-ZnO/n-AZO Avalanche Photodiode.

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第一作者： Gaoming,Li

第一单位： School of Microelectronics, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, No. 28 Xianning West Road, Xi'an 710049, China.;School of Materials Science and Engineering, Xi'an Jiaotong University, No. 28 Xianning West Road, Xi'an 710049, China.

作者： Gaoming,Li ^[1] ; Xiaolong,Zhao ^[2] ; Xiangwei,Jia ^[2] ; Shuangqing,Li ^[2] ; Yongning,He ^[2]

作者单位： School of Microelectronics, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, No. 28 Xianning West Road, Xi'an 710049, China.;School of Materials Science and Engineering, Xi'an Jiaotong University, No. 28 Xianning West Road, Xi'an 710049, China. ^[1] School of Microelectronics, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, No. 28 Xianning West Road, Xi'an 710049, China. ^[2]

关键词 avalanche photodiode (APD)impact ionization coefficients p-Si/i-ZnO/n-AZO

DOI 10.3390/mi11080740

PMID 32751520

发布时间 2020-09-28

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2020年11卷8期

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Characterization of Impact Ionization Coefficient of ZnO Based on a p-Si/i-ZnO/n-AZO Avalanche Photodiode.

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Characterization of Impact Ionization Coefficient of ZnO Based on a p-Si/i-ZnO/n-AZO Avalanche Photodiode.

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