Resistive Switching in Few-Layer Hexagonal Boron Nitride Mediated by Defects and Interfacial Charge Transfer.

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作者： Hokyeong,Jeong ^[1] ; Jiye,Kim ^[1] ; Dong Yeong,Kim ^[1] ; Jaewon,Kim ^[1] ; Seokho,Moon ^[1] ; Odongo Francis,Ngome Okello ^[1] ; Sangmin,Lee ^[1] ; Hyunsang,Hwang ^[1] ; Si-Young,Choi ^[1] ; Jong Kyu,Kim ^[1]

作者单位： Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea. ^[1]

关键词 MOCVD RRAM h-BN interfacial charge transfer resistive switching structural defect

DOI 10.1021/acsami.0c12012

PMID 32959644

发布时间 2020-10-15

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ACS applied materials & interfaces

2020年12卷41期

46288-46295页

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Resistive Switching in Few-Layer Hexagonal Boron Nitride Mediated by Defects and Interfacial Charge Transfer.

ACS applied materials & interfaces

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ACS applied materials & interfaces

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Resistive Switching in Few-Layer Hexagonal Boron Nitride Mediated by Defects and Interfacial Charge Transfer.

ACS applied materials & interfaces

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ACS applied materials & interfaces

相关期刊

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