GeSn/SiO<sub>2</sub> Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics.

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第一作者： Adrian,Slav

第一单位： National Institute of Materials Physics, 405A Atomistilor Street, Magurele 077125, Romania.

作者： Adrian,Slav ^[1] ; Ioana,Dascalescu ^[1] ; Ana-Maria,Lepadatu ^[2] ; Catalin,Palade ^[1] ; Nicolae C,Zoita ^[1] ; Hermine,Stroescu ^[3] ; Sorina,Iftimie ^[4] ; Sorina,Lazanu ^[2] ; Mariuca,Gartner ^[1] ; Dan,Buca ^[4] ; Valentin S,Teodorescu ^[5] ; Magdalena L,Ciurea ^[1] ; Mariana,Braic ^[6] ; Toma,Stoica ^[1]

作者单位： National Institute of Materials Physics, 405A Atomistilor Street, Magurele 077125, Romania. ^[1] Faculty of Physics, University of Bucharest, 405 Atomistilor Street, Magurele 077125, Romania. ^[2] National Institute for Research and Development in Optoelectronics, 409 Atomistilor Street, Magurele 077125, Romania. ^[3] Institute of Physical Chemistry of the Romanian Academy, 202 Splaiul Independentei, Bucharest 060021, Romania. ^[4] Peter Grünberg Institut 9 (PGI 9) and JARA Fundamentals of Future Information Technologies, Forschungszentrum Jülich, Jülich 52425, Germany. ^[5] Academy of Romanian Scientists, 54 Splaiul Independentei, Bucharest 050094, Romania. ^[6]

关键词 GeSn alloy GeSn heterojunction diode GeSn/SiO2 multilayers on Si SWIR photosensitivity magnetron sputtering nanocomposite nanocrystals

DOI 10.1021/acsami.0c15887

PMID 33275429

发布时间 2020-12-17

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