Defects and internal electric fields synergistically optimized g-C3N4-x/BiOCl/WO2.92 heterojunction for photocatalytic NO deep oxidation.

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作者： Min,Wang ^[1] ; Guoqiang,Tan ^[2] ; Shuaijun,Feng ^[1] ; Mingyue,Dang ^[1] ; Yong,Wang ^[1] ; Bixin,Zhang ^[1] ; Huijun,Ren ^[3] ; Long,Lv ^[4] ; Ao,Xia ^[1] ; Wenlong,Liu ^[5] ; Yun,Liu ^[5]

作者单位： Shaanxi Key Laboratory of Green Preparation and Functionalization for Inorganic Materials, School of Materials Science and Engineering, Shaanxi University of Science & Technology, Xi'an 710021, China. ^[1] Shaanxi Key Laboratory of Green Preparation and Functionalization for Inorganic Materials, School of Materials Science and Engineering, Shaanxi University of Science & Technology, Xi'an 710021, China. Electronic address: tan3114@163.com. ^[2] School of Arts and Sciences, Shaanxi University of Science & Technology, Xi'an 710021, China. ^[3] College of Cryptography Engineering, Engineering University of PAP, Xi'an 710086, China. ^[4] School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an 710021, China. ^[5]

关键词 Deep oxidation Defects Double Z-scheme Internal electric fields NO

DOI 10.1016/j.jhazmat.2020.124897

PMID 33360701

发布时间 2021-02-23

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Journal of hazardous materials

2021年408卷

124897页

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Defects and internal electric fields synergistically optimized g-C<sub>3</sub>N<sub>4-x</sub>/BiOCl/WO<sub>2.92</sub> heterojunction for photocatalytic NO deep oxidation.

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Defects and internal electric fields synergistically optimized g-C<sub>3</sub>N<sub>4-x</sub>/BiOCl/WO<sub>2.92</sub> heterojunction for photocatalytic NO deep oxidation.

Journal of hazardous materials

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Journal of hazardous materials

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