Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows.

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第一作者： Viktor,Shamakhov

第一单位： Ioffe Institute, 26 Politekhnicheskaya, St Petersburg 194021, Russia.

作者： Viktor,Shamakhov ^[1] ; Dmitriy,Nikolaev ^[1] ; Sergey,Slipchenko ^[1] ; Evgenii,Fomin ^[2] ; Alexander,Smirnov ^[1] ; Ilya,Eliseyev ^[1] ; Nikita,Pikhtin ^[1] ; Peter,Kop Ev ^[1]

作者单位： Ioffe Institute, 26 Politekhnicheskaya, St Petersburg 194021, Russia. ^[1] Elfolum Ltd., 26 Politekhnicheskaya, St Petersburg 194021, Russia. ^[2]

关键词 InGaAs MOCVD atomic force microscopy photoluminescence quantum wells selective area epitaxy selective area growth semiconductors

DOI 10.3390/nano11010011

PMID 33374632

发布时间 2021-01-23

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Nanomaterials (Basel, Switzerland)

2020年11卷1期

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Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows.

Nanomaterials (Basel, Switzerland)

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Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows.

Nanomaterials (Basel, Switzerland)

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Nanomaterials (Basel, Switzerland)

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