Doping-Free All PtSe<sub>2</sub> Transistor via Thickness-Modulated Phase Transition.

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第一作者： Tanmoy,Das

第一单位： Department of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea.

作者： Tanmoy,Das ^[1] ; Eunyeong,Yang ^[1] ; Jae Eun,Seo ^[1] ; Jeong Hyeon,Kim ^[1] ; Eunpyo,Park ^[2] ; Minkyung,Kim ^[2] ; Dongwook,Seo ^[1] ; Joon Young,Kwak ^[2] ; Jiwon,Chang ^[1]

作者单位： Department of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea. ^[1] Center for Neuromorphic Engineering, Korea Institute of Science and Technology (KIST), Seoul 02792, South Korea. ^[2]

关键词 Schottky barrier height contact resistance platinum diselenide semiconductor-to-metal phase transition van der Waals contact

DOI 10.1021/acsami.0c17810

PMID 33393295

发布时间 2021-01-14

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