Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar ( 11 2 ¯ 2 ) and Non-Polar ( 11 2 ¯ 0 ) GaN Nanorods.

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第一作者： Pierre-Marie,Coulon

第一单位： Department of Electrical & Electronic Engineering, University of Bath, Bath BA2 7AY, UK.

作者： Pierre-Marie,Coulon ^[1] ; Peng,Feng ^[2] ; Tao,Wang ^[2] ; Philip A,Shields ^[1]

作者单位： Department of Electrical & Electronic Engineering, University of Bath, Bath BA2 7AY, UK. ^[1] Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 4DE, UK. ^[2]

关键词 GaN dry etching inductively coupled plasma light emitting devices morphology nanostructures

DOI 10.3390/nano10122562

PMID 33419314

发布时间 2024-03-30

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Nanomaterials (Basel, Switzerland)

2020年10卷12期

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Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar ( 11 2 ¯ 2 ) and Non-Polar ( 11 2 ¯ 0 ) GaN Nanorods.

Nanomaterials (Basel, Switzerland)

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Nanomaterials (Basel, Switzerland)

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Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar ( 11 2 ¯ 2 ) and Non-Polar ( 11 2 ¯ 0 ) GaN Nanorods.

Nanomaterials (Basel, Switzerland)

相似文献

Nanomaterials (Basel, Switzerland)

相关期刊

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