Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors.

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作者： Huan,Yang ^[1] ; Xiaoliang,Zhou ^[1] ; Haishi,Fu ^[1] ; Baozhu,Chang ^[1] ; Yuxin,Min ^[1] ; Hao,Peng ^[1] ; Lei,Lu ^[1] ; Shengdong,Zhang ^[1]

作者单位： School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China. ^[1] School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China. ^[2]

关键词 amorphous indium?gallium-zinc oxide (a-IGZO)amorphous oxide semiconductors (AOS)bulk-doping effect metal treatment oxidation?reduction reaction oxygen vacancy diffusion thin-film transistors (TFT)

DOI 10.1021/acsami.0c21123

PMID 33591715

发布时间 2021-03-15

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ACS applied materials & interfaces

2021年13卷9期

11442-11448页

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Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors.

ACS applied materials & interfaces

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ACS applied materials & interfaces

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Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors.

ACS applied materials & interfaces

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ACS applied materials & interfaces

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