Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices.

导出 LinkOut

翻译打印收藏纠错

作者： Stefano,Ippolito ^[1] ; Adam G,Kelly ^[2] ; Rafael,Furlan de Oliveira ^[1] ; Marc-Antoine,Stoeckel ^[1] ; Daniel,Iglesias ^[1] ; Ahin,Roy ^[3] ; Clive,Downing ^[3] ; Zan,Bian ^[4] ; Lucia,Lombardi ^[4] ; Yarjan Abdul,Samad ^[4] ; Valeria,Nicolosi ^[3] ; Andrea C,Ferrari ^[4] ; Jonathan N,Coleman ^[2] ; Paolo,Samorì ^[5]

作者单位： Université de Strasbourg, CNRS, ISIS UMR 7006, Strasbourg, France. ^[1] School of Physics, Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), Trinity College Dublin, Dublin, Ireland. ^[2] School of Chemistry, Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), Trinity College Dublin, Dublin, Ireland. ^[3] Cambridge Graphene Centre, Cambridge University, Cambridge, United Kingdom. ^[4] Université de Strasbourg, CNRS, ISIS UMR 7006, Strasbourg, France. samori@unistra.fr. ^[5]

DOI 10.1038/s41565-021-00857-9

PMID 33633405

发布时间 2023-01-29

翻译满意度评价：

准确一般字义偏差语意偏离译文作用小提交

浏览0

Nature nanotechnology

2021年16卷5期

592-598页

相似文献

中文期刊
外文期刊
学位论文
会议论文

检索历史清除

Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices.

Nature nanotechnology

相似文献

Nature nanotechnology

相关期刊

参考文献：
指定格式：	NoteExpress EndNote RefWorks NoteFirst

检索历史 清除

Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices.

Nature nanotechnology

相似文献

Nature nanotechnology

相关期刊

检索历史清除