Study of the Cross-Influence between III-V and IV Elements Deposited in the Same MOVPE Growth Chamber.

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第一作者： Gianluca,Timò

第一单位： RSE, Strada Torre della Razza, le Mose, 29100 Piacenza, Italy.

作者： Gianluca,Timò ^[1] ; Marco,Calicchio ^[2] ; Giovanni,Abagnale ^[1] ; Nicola,Armani ^[1] ; Elisabetta,Achilli ^[1] ; Marina,Cornelli ^[1] ; Filippo,Annoni ^[1] ; Bernd,Schineller ^[1] ; Lucio Claudio,Andreani ^[3]

作者单位： RSE, Strada Torre della Razza, le Mose, 29100 Piacenza, Italy. ^[1] Department of Physics, University of Pavia, Via Bassi 6, 27100 Pavia, Italy. ^[2] AIXTRON SE, Dornkaulstrasse 2, 52134 Herzogenrath, Germany. ^[3]

关键词 AlGaAs Ge InGaAs InGaP MOVPE SiGe SiGeSn cross-doping multi-junction solar cells

DOI 10.3390/ma14051066

PMID 33668771

发布时间 2021-03-16

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