Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al<sub>2</sub>O<sub>3</sub> Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors.

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作者： Yujin,Lee ^[1] ; Taewook,Nam ^[1] ; Seunggi,Seo ^[2] ; Hwi,Yoon ^[1] ; Il-Kwon,Oh ^[1] ; Chong Hwon,Lee ^[1] ; Hyukjoon,Yoo ^[3] ; Hyun Jae,Kim ^[1] ; Wonjun,Choi ^[4] ; Seongil,Im ^[1] ; Joon Young,Yang ^[1] ; Dong Wook,Choi ^[5] ; Choongkeun,Yoo ^[5] ; Ho-Jin,Kim ^[4] ; Hyungjun,Kim ^[4]

作者单位： School of Electrical and Electronics Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea. ^[1] Department of Chemistry, University of Colorado Boulder, Boulder, Colorado 80309, United States. ^[2] Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea. ^[3] LG Display Company, Ltd., 245 LG-ro, Wollong-myeon, Paju-si, Gyeonggi-do 10845, Republic of Korea. ^[4] Department of Physics, Van der Waals Materials Research Center, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea. ^[5]

关键词 Al2O3 a-IGZO atomic layer deposition hydrogen barrier stability

DOI 10.1021/acsami.1c02597

PMID 33818057

发布时间 2021-05-06

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