Multi-colour light emission from InGaN nanowires monolithically grown on Si substrate by MBE.

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第一作者： Vladislav O,Gridchin

第一单位： Alferov University, Saint-Petersburg 194021, Russia.

作者： Vladislav O,Gridchin ^[1] ; Konstantin P,Kotlyar ^[2] ; Rodion R,Reznik ^[2] ; Anna S,Dragunova ^[1] ; Natalia V,Kryzhanovskaya ^[2] ; Vera V,Lendyashova ^[3] ; Demid A,Kirilenko ^[4] ; Ilya P,Soshnikov ^[5] ; Dmitrii S,Shevchuk ^[1] ; George G,Cirlin ^[5]

作者单位： Alferov University, Saint-Petersburg 194021, Russia. ^[1] Saint-Petersburg State University, Saint-Petersburg 198504, Russia. ^[2] ITMO University, Saint-Petersburg 197101, Russia. ^[3] Institute for Analytical Instrumentation RAS, Saint-Petersburg 190103, Russia. ^[4] HSE University, Saint-Petersburg 190008, Russia. ^[5] Ioffe Institute, Saint-Petersburg 194021, Russia. ^[6] Saint-Petersburg Electrotechnical University 'LETI', Saint-Petersburg 197376, Russia. ^[7]

关键词 InGaN miscibility gap molecular beam epitaxy multi-colour emission nanowires silicon

DOI 10.1088/1361-6528/ac0027

PMID 33975293

发布时间 2021-05-31

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