Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire With a Combined Buffer Layer by HVPE.

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作者： Nanliu,Liu ^[1] ; Yongjing,Jiang ^[2] ; Jian,Xiao ^[2] ; Zhiwen,Liang ^[1] ; Qi,Wang ^[2] ; Guoyi,Zhang ^[2]

作者单位： School of Physics and Electronics, Qiannan Normal University for Nationalities, Duyun, China. ^[1] Dongguan Institute of Opto-Electronics, Peking University, Dongguan, China. ^[2] Research Center for Wide-Gap Semiconductors, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing, China. ^[3]

关键词 3D GaN interlayer HVPE LT-AlN combined buffer layer free-standing GaN substrate pre-annealing

DOI 10.3389/fchem.2021.671720

PMID 33996764

发布时间 2021-05-17

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Frontiers in chemistry

2021年9卷

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Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire With a Combined Buffer Layer by HVPE.

Frontiers in chemistry

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Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire With a Combined Buffer Layer by HVPE.

Frontiers in chemistry

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Frontiers in chemistry

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