Low-Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe<sub>2</sub> for In-Memory Computing.

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作者： Long,Liu ^[1] ; Yi,Li ^[1] ; Xiaodi,Huang ^[1] ; Jia,Chen ^[1] ; Zhe,Yang ^[1] ; Kan-Hao,Xue ^[1] ; Ming,Xu ^[1] ; Huawei,Chen ^[2] ; Peng,Zhou ^[2] ; Xiangshui,Miao ^[1]

作者单位： Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China. ^[1] State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China. ^[2]

关键词 2D HfSe2 in-memory computing low-power consumption memristors oxidation resistive switching

DOI 10.1002/advs.202005038

PMID 34050639

发布时间 2023-11-07

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Advanced science (Weinheim, Baden-Wurttemberg, Germany)

2021年8卷15期

e2005038页

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Low-Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe<sub>2</sub> for In-Memory Computing.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)

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Advanced science (Weinheim, Baden-Wurttemberg, Germany)

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Low-Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe<sub>2</sub> for In-Memory Computing.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)

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Advanced science (Weinheim, Baden-Wurttemberg, Germany)

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