More Se Vacancies in Sb<sub>2</sub> Se<sub>3</sub> under Se-Rich Conditions: An Abnormal Behavior Induced by Defect-Correlation in Compensated Compound Semiconductors.

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第一作者： Menglin,Huang

第一单位： State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.

作者： Menglin,Huang ^[1] ; Zenghua,Cai ^[2] ; Shanshan,Wang ^[3] ; Xin-Gao,Gong ^[1] ; Su-Huai,Wei ^[2] ; Shiyou,Chen ^[3]

作者单位： State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China. ^[1] Key Laboratory of Polar Materials and Devices (MOE), and Department of Electronics, East China Normal University, Shanghai, 200241, China. ^[2] Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai, 200433, China. ^[3] Beijing Computational Science Research Center, Beijing, 100193, China. ^[4]

关键词 Sb 2Se 3 compound semiconductors defect engineering donor-acceptor compensation first-principles calculation

DOI 10.1002/smll.202102429

PMID 34313000

发布时间 2021-09-09

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