首页> Journal of physics. Condensed matter : an Institute of Physics journal> Efficient passivation of n-type and p-type silicon surface defects by hydrogen sulfide gas reaction.

Efficient passivation of n-type and p-type silicon surface defects by hydrogen sulfide gas reaction.

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第一作者： U K,Das

第一单位： Institute of Energy Conversion, University of Delaware, Newark, United States of America.

作者： U K,Das ^[1] ; R,Theisen ^[1] ; A,Hua ^[2] ; A,Upadhyaya ^[3] ; I,Lam ^[1] ; T K,Mouri ^[1] ; N,Jiang ^[2] ; D,Hauschild ^[4] ; L,Weinhardt ^[4] ; W,Yang ^[5] ; A,Rohatgi ^[3] ; C,Heske ^[4]

作者单位： Institute of Energy Conversion, University of Delaware, Newark, United States of America. ^[1] Department of Chemistry and Biochemistry, University of Nevada Las Vegas, Las Vegas, United States of America. ^[2] School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, United States of America. ^[3] Department of Chemistry and Biochemistry, University of Nevada Las Vegas, Las Vegas, United States of America.;Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Karlsruhe, Germany.;Institute for Chemical Technology and Polymer Chemistry, Karlsruhe Institute of Technology, Karlsruhe, Germany. ^[4] Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, United States of America. ^[5]

关键词 hydrogen sulfide reaction silicon surface passivation x-ray emission spectroscopy x-ray photoelectron spectroscopy

DOI 10.1088/1361-648X/ac1ec8

PMID 34407514

发布时间 2021-09-03

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