Passivation of the Buried Interface via Preferential Crystallization of 2D Perovskite on Metal Oxide Transport Layers.

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作者： Bin,Chen ^[1] ; Hao,Chen ^[1] ; Yi,Hou ^[2] ; Jian,Xu ^[1] ; Sam,Teale ^[1] ; Koen,Bertens ^[1] ; Haijie,Chen ^[1] ; Andrew,Proppe ^[1] ; Qilin,Zhou ^[1] ; Danni,Yu ^[2] ; Kaimin,Xu ^[2] ; Maral,Vafaie ^[2] ; Yuan,Liu ^[1] ; Yitong,Dong ^[1] ; Eui Hyuk,Jung ^[1] ; Chao,Zheng ^[1] ; Tong,Zhu ^[1] ; Zhijun,Ning ^[1] ; Edward H,Sargent ^[2]

作者单位： Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario, M5S 1A4, Canada. ^[1] School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China. ^[2]

关键词 interface passivation perovskites solar cells

DOI 10.1002/adma.202103394

PMID 34425038

发布时间 2021-10-13

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Advanced materials (Deerfield Beach, Fla.)

2021年33卷41期

e2103394页

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Passivation of the Buried Interface via Preferential Crystallization of 2D Perovskite on Metal Oxide Transport Layers.

Advanced materials (Deerfield Beach, Fla.)

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Advanced materials (Deerfield Beach, Fla.)

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Passivation of the Buried Interface via Preferential Crystallization of 2D Perovskite on Metal Oxide Transport Layers.

Advanced materials (Deerfield Beach, Fla.)

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Advanced materials (Deerfield Beach, Fla.)

相关期刊

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