Spontaneous Polarization Calculations in Wurtzite II-Oxides, III-Nitrides, and SiC Polytypes through Net Dipole Moments and the Effects of Nanoscale Layering.

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作者： William,Troy ^[1] ; Mitra,Dutta ^[1] ; Michael,Stroscio ^[2]

作者单位： Department of Electrical and Computer Engineering, University of IL at Chicago, Chicago, IL 60517, USA. ^[1] Physics Department, University of IL at Chicago, Chicago, IL 60517, USA. ^[2] Richard and Loan Hill Department of Biomedical Engineering, University of IL at Chicago, Chicago, IL 60517, USA. ^[3]

关键词 GaN SiC built-in electric field dipole hexagonal lattice nanolayer semiconductor spontaneous polarization wurtzite

DOI 10.3390/nano11081956

PMID 34443788

发布时间 2021-08-31

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Nanomaterials (Basel, Switzerland)

2021年11卷8期

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Spontaneous Polarization Calculations in Wurtzite II-Oxides, III-Nitrides, and SiC Polytypes through Net Dipole Moments and the Effects of Nanoscale Layering.

Nanomaterials (Basel, Switzerland)

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Nanomaterials (Basel, Switzerland)

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Spontaneous Polarization Calculations in Wurtzite II-Oxides, III-Nitrides, and SiC Polytypes through Net Dipole Moments and the Effects of Nanoscale Layering.

Nanomaterials (Basel, Switzerland)

相似文献

Nanomaterials (Basel, Switzerland)

相关期刊

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