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Low-Temperature Nitrogen Doping of Nanocrystalline Graphene Films with Tunable Pyridinic-N and Pyrrolic-N by Cold-Wall Plasma-Assisted Chemical Vapor Deposition.

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第一作者： Nur Hamizah,Zainal Ariffin

第一单位： Advanced Devices and Material Engineering Research Lab, Department of Electronic Systems Engineering, Malaysia-Japan International Institute of Technology, Universiti Teknologi Malaysia, 51400 Kuala Lumpur, Malaysia.;Advanced Devices Lab, MIMOS Berhad, Technology Park Malaysia, 57000 Kuala Lumpur, Malaysia.

作者： Nur Hamizah,Zainal Ariffin ^[1] ; Muhammad Aniq Shazni,Mohammad Haniff ^[2] ; Mohd Ismahadi,Syono ^[3] ; Mohd,Ambri Mohamed ^[2] ; Azrul Azlan,Hamzah ^[2] ; Abdul Manaf,Hashim ^[4]

作者单位： Advanced Devices and Material Engineering Research Lab, Department of Electronic Systems Engineering, Malaysia-Japan International Institute of Technology, Universiti Teknologi Malaysia, 51400 Kuala Lumpur, Malaysia.;Advanced Devices Lab, MIMOS Berhad, Technology Park Malaysia, 57000 Kuala Lumpur, Malaysia. ^[1] Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, 43600 Bangi, Malaysia. ^[2] Advanced Devices Lab, MIMOS Berhad, Technology Park Malaysia, 57000 Kuala Lumpur, Malaysia. ^[3] Advanced Devices and Material Engineering Research Lab, Department of Electronic Systems Engineering, Malaysia-Japan International Institute of Technology, Universiti Teknologi Malaysia, 51400 Kuala Lumpur, Malaysia. ^[4]

DOI 10.1021/acsomega.1c01520

PMID 34568651

发布时间 2021-09-29

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2021年6卷37期

23710-23722页

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ACS omega

2021年6卷37期

23710-23722页

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Low-Temperature Nitrogen Doping of Nanocrystalline Graphene Films with Tunable Pyridinic-N and Pyrrolic-N by Cold-Wall Plasma-Assisted Chemical Vapor Deposition.

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Low-Temperature Nitrogen Doping of Nanocrystalline Graphene Films with Tunable Pyridinic-N and Pyrrolic-N by Cold-Wall Plasma-Assisted Chemical Vapor Deposition.

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