Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD.

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第一作者： Lian,Zhang

第一单位： Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

作者： Lian,Zhang ^[1] ; Rong,Wang ^[2] ; Zhe,Liu ^[3] ; Zhe,Cheng ^[1] ; Xiaodong,Tong ^[4] ; Jianxing,Xu ^[1] ; Shiyong,Zhang ^[2] ; Yun,Zhang ^[2] ; Fengxiang,Chen ^[2]

作者单位： Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. ^[1] Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China. ^[2] Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 311200, China. ^[3] Lishui Zhongke Semiconductor Material Co., Ltd., Lishui 323000, China. ^[4] Department of Physics, School of Science, Wuhan University of Technology, Wuhan 430070, China. ^[5]

关键词 InGaN hole interstitial Mg

DOI 10.3390/ma14185339

PMID 34576563

发布时间 2021-10-01

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Materials (Basel, Switzerland)

2021年14卷18期

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Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD.

Materials (Basel, Switzerland)

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Materials (Basel, Switzerland)

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Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD.

Materials (Basel, Switzerland)

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Materials (Basel, Switzerland)

相关期刊

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