Stress Effects on Temperature-Dependent In-Plane Raman Modes of Supported Monolayer Graphene Induced by Thermal Annealing.

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作者： Yuehua,Wei ^[1] ; Zhenhua,Wei ^[2] ; Xiaoming,Zheng ^[3] ; Jinxin,Liu ^[3] ; Yangbo,Chen ^[3] ; Yue,Su ^[3] ; Wei,Luo ^[2] ; Gang,Peng ^[2] ; Han,Huang ^[4] ; Weiwei,Cai ^[3] ; Chuyun,Deng ^[2] ; Xueao,Zhang ^[3] ; Shiqiao,Qin ^[1]

作者单位： College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China. ^[1] College of Arts and Sciences, National University of Defense Technology, Changsha 410073, China. ^[2] College of Physical Science and Technology, Xiamen University, Xiamen 361005, China. ^[3] Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China. ^[4]

关键词 compressive stress monolayer graphene temperature coefficient temperature-dependent in-plane Raman phonon modes thermal annealing

DOI 10.3390/nano11102751

PMID 34685191

发布时间 2021-10-26

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Nanomaterials (Basel, Switzerland)

2021年11卷10期

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Stress Effects on Temperature-Dependent In-Plane Raman Modes of Supported Monolayer Graphene Induced by Thermal Annealing.

Nanomaterials (Basel, Switzerland)

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Nanomaterials (Basel, Switzerland)

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Stress Effects on Temperature-Dependent In-Plane Raman Modes of Supported Monolayer Graphene Induced by Thermal Annealing.

Nanomaterials (Basel, Switzerland)

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Nanomaterials (Basel, Switzerland)

相关期刊

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