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Nonvolatile Logic and Ternary Content-Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors.

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第一作者： Xiong,Xiong

第一单位： Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University, Beijing, 100871, China.

作者： Xiong,Xiong ^[1] ; Jiyang,Kang ^[2] ; Shiyuan,Liu ^[1] ; Anyu,Tong ^[1] ; Tianyue,Fu ^[1] ; Xuefei,Li ^[2] ; Ru,Huang ^[3] ; Yanqing,Wu ^[4]

作者单位： Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University, Beijing, 100871, China. ^[1] Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China. ^[2] Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University, Beijing, 100871, China.;Frontiers Science Center for Nano-Optoelectronics, Peking University, Beijing, 100871, China. ^[3] Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University, Beijing, 100871, China.;Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China.;Frontiers Science Center for Nano-Optoelectronics, Peking University, Beijing, 100871, China. ^[4]

关键词 Schmidt-like flip-flop black phosphorus nonvolatile logic rhenium disulfide ternary content-addressable memory

DOI 10.1002/adma.202106321

PMID 34779068

发布时间 2022-12-01

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