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High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx.

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第一作者： Ozhan,Koybasi

第一单位： Department of Microsystems and Nanotechnology (MiNaLab), SINTEF Digital, 0314 Oslo, Norway.

作者： Ozhan,Koybasi ^[1] ; Ørnulf,Nordseth ^[2] ; Trinh,Tran ^[3] ; Marco,Povoli ^[1] ; Mauro,Rajteri ^[4] ; Carlo,Pepe ^[5] ; Eivind,Bardalen ^[6] ; Farshid,Manoocheri ^[7] ; Anand,Summanwar ^[1] ; Mikhail,Korpusenko ^[7] ; Michael N,Getz ^[8] ; Per,Ohlckers ^[6] ; Erkki,Ikonen ^[9] ; Jarle,Gran ^[3]

作者单位： Department of Microsystems and Nanotechnology (MiNaLab), SINTEF Digital, 0314 Oslo, Norway. ^[1] Department of Solar Energy, Institute for Energy Technology (IFE), 2027 Kjeller, Norway. ^[2] Justervesenet, 2027 Kjeller, Norway. ^[3] Istituto Nazionale di Ricerca Metrologica (INRIM), 10135 Turin, Italy. ^[4] Istituto Nazionale di Ricerca Metrologica (INRIM), 10135 Turin, Italy.;Department of Electronics and Telecommunications, Politecnico di Torino, 10129 Turin, Italy. ^[5] Department of Microsystems, University of South-Eastern Norway (USN), 3184 Borre, Norway. ^[6] Metrology Research Institute, Aalto University, 02150 Espoo, Finland. ^[7] Department of Physics, University of Oslo, 0316 Oslo, Norway. ^[8] Metrology Research Institute, Aalto University, 02150 Espoo, Finland.;VTT MIKES, VTT Technical Research Centre of Finland Ltd., 02150 Espoo, Finland. ^[9]

关键词 PECVD silicon nitride induced-junction inversion layer photodiode optical power predictable quantum efficiency primary standard radiometry silicon photodetector surface passivation

DOI 10.3390/s21237807

PMID 34883811

发布时间 2021-12-14

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