Localized surface plasmon resonance-enhanced solar-blind Al<sub>0.4</sub>Ga<sub>0.6</sub>N MSM photodetectors exhibiting high-temperature robustness.

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第一作者： Shuchi,Kaushik

第一单位： Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.

作者： Shuchi,Kaushik ^[1] ; Subhajit,Karmakar ^[1] ; Prashant,Bisht ^[1] ; Che-Hao,Liao ^[2] ; Xiaohang,Li ^[2] ; Ravendra Kumar,Varshney ^[1] ; Bodh Raj,Mehta ^[1] ; Rajendra,Singh ^[1]

作者单位： Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India. ^[1] Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia. ^[2] Nanoscale Research Facility, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India. ^[3]

关键词 AlGaN high-temperature robustness localized surface plasmon resonance responsivity solar-blind photodetector specific detectivity

DOI 10.1088/1361-6528/ac4285

PMID 34902849

发布时间 2022-01-13

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