Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7.

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第一作者： Joshua,Grant

第一单位： Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA.

作者： Joshua,Grant ^[1] ; Grey,Abernathy ^[1] ; Oluwatobi,Olorunsola ^[2] ; Solomon,Ojo ^[1] ; Sylvester,Amoah ^[2] ; Emmanuel,Wanglia ^[1] ; Samir K,Saha ^[2] ; Abbas,Sabbar ^[1] ; Wei,Du ^[1] ; Murtadha,Alher ^[2] ; Bao-Hua,Li ^[3] ; Shui-Qing,Yu ^[1]

作者单位： Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA. ^[1] Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA. ^[2] Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA. ^[3] Department of Electrical Engineering and Physics, Wilkes University, Wilkes-Barre, PA 18766, USA. ^[4] Mechanical Engineering Department, University of Kerbala, Kerbala 56001, Iraq. ^[5] Arktonics, LLC, 1339 South Pinnacle Drive, Fayetteville, AR 72701, USA. ^[6] Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA. ^[7]

关键词 CVD growth GeSn group-IV low pressure

DOI 10.3390/ma14247637

PMID 34947234

发布时间 2021-12-29

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Materials (Basel, Switzerland)

2021年14卷24期

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Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7.

Materials (Basel, Switzerland)

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Materials (Basel, Switzerland)

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Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7.

Materials (Basel, Switzerland)

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Materials (Basel, Switzerland)

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