Effect of Step Gate Work Function on InGaAs p-TFET for Low Power Switching Applications.

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第一作者： Sayed Md Tariful,Azam

第一单位： Department of Electrical and Computer Engineering, Technische Universität Kaiserslautern, 67653 Kaiserslautern, Germany.

作者： Sayed Md Tariful,Azam ^[1] ; Abu Saleh Md,Bakibillah ^[2] ; Md Tanvir,Hasan ^[3] ; Md Abdus Samad,Kamal ^[2]

作者单位： Department of Electrical and Computer Engineering, Technische Universität Kaiserslautern, 67653 Kaiserslautern, Germany. ^[1] Department of Electrical and Electronic Engineering, Jashore University of Science and Technology, Jashore 7408, Bangladesh. ^[2] School of Engineering, Monash University, Bandar Sunway, Subang Jaya 47500, Malaysia. ^[3] Graduate School of Science and Technology, Gunma University, 1-5-1 Tenjincho, Kiryu 376-8515, Japan. ^[4]

关键词 InGaAs dual material gate gate work function low power switching p-TFET

DOI 10.3390/nano11123166

PMID 34947514

发布时间 2021-12-28

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Nanomaterials (Basel, Switzerland)

2021年11卷12期

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Effect of Step Gate Work Function on InGaAs p-TFET for Low Power Switching Applications.

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Effect of Step Gate Work Function on InGaAs p-TFET for Low Power Switching Applications.

Nanomaterials (Basel, Switzerland)

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