Atomic Defect Induced Saturable Absorption of Hexagonal Boron Nitride in Near Infrared Band for Ultrafast Lasing Applications.

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第一作者： Chen,Cheng

第一单位： Shandong Provincial Key Laboratory of Optics and Photonic Devices, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China.

作者： Chen,Cheng ^[1] ; Ziqi,Li ^[2] ; Ningning,Dong ^[3] ; Rang,Li ^[2] ; Jun,Wang ^[3] ; Feng,Chen ^[2]

作者单位： Shandong Provincial Key Laboratory of Optics and Photonic Devices, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China. ^[1] State Key Laboratory of Crystal Materials, School of Physics, Shandong University, Jinan 250100, China. ^[2] Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China. ^[3]

关键词 atom-scale defect hexagonal boron nitride mode-locked lasers saturable absorbers two-dimensional materials

DOI 10.3390/nano11123203

PMID 34947552

发布时间 2021-12-28

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Nanomaterials (Basel, Switzerland)

2021年11卷12期

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Atomic Defect Induced Saturable Absorption of Hexagonal Boron Nitride in Near Infrared Band for Ultrafast Lasing Applications.

Nanomaterials (Basel, Switzerland)

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Nanomaterials (Basel, Switzerland)

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Atomic Defect Induced Saturable Absorption of Hexagonal Boron Nitride in Near Infrared Band for Ultrafast Lasing Applications.

Nanomaterials (Basel, Switzerland)

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Nanomaterials (Basel, Switzerland)

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