Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm.

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第一作者： Małgorzata,Kopytko

第一单位： Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland.

作者： Małgorzata,Kopytko ^[1] ; Jan,Sobieski ^[1] ; Waldemar,Gawron ^[2] ; Piotr,Martyniuk ^[1]

作者单位： Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland. ^[1] Vigo System S.A., 129/133 Poznańska St., 05-850 Ożarów Mazowiecki, Poland. ^[2] Department of Electrical Engineering, The Ohio State University, 2024 Neil Avenue, Columbus, OH 43210, USA. ^[3]

关键词 HgCdTe avalanche gain avalanche multiplication avalanche photodiodes excess noise factor impact ionization infrared detectors

DOI 10.3390/s22030924

PMID 35161667

发布时间 2022-02-19

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