Visualizing Line Defects in non-van der Waals Bi<sub>2</sub>O<sub>2</sub>Se Using Raman Spectroscopy.

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第一作者： Un Jeong,Kim

第一单位： Advanced Sensor Laboratory, Samsung Advanced Institute of Technology, Suwon, Gyeonggi-do 16419, Republic of Korea.

作者： Un Jeong,Kim ^[1] ; Seung Hyun,Nam ^[2] ; Juyeon,Seo ^[2] ; Mino,Yang ^[3] ; Qundong,Fu ^[4] ; Zheng,Liu ^[4] ; Hyungbin,Son ^[5] ; Moonsang,Lee ^[2] ; Myung Gwan,Hahm ^[2]

作者单位： Advanced Sensor Laboratory, Samsung Advanced Institute of Technology, Suwon, Gyeonggi-do 16419, Republic of Korea. ^[1] Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon, 22212, Republic of Korea. ^[2] Korea Basic Science Institute Seoul, Seoul, 02841, Republic of Korea. ^[3] School of Materials Science & Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore. ^[4] School of Integrative Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea. ^[5]

关键词 Bi2O2Se defects low-frequency Raman modes polarized Raman spectroscopy synthesis

DOI 10.1021/acsnano.1c06598

PMID 35166540

发布时间 2022-03-23

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