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Insulation Performance and Simulation Analysis of SiO<sub>2</sub>-Aramid Paper under High-Voltage Bushing.

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第一作者： Bowen,Liu

第一单位： Hebei Provincial Key Laboratory of Power Transmission Equipment Security Defence, North China Electric Power University, Baoding 071003, China.

作者： Bowen,Liu ^[1] ; Fangcheng,Lv ^[1] ; Xiaozhou,Fan ^[1] ; Hai,Xiao ^[1] ; Hanwen,Bi ^[1]

作者单位： Hebei Provincial Key Laboratory of Power Transmission Equipment Security Defence, North China Electric Power University, Baoding 071003, China. ^[1]

关键词 OIP bushing SiO2 aramid insulation paper nano-modified technology

DOI 10.3390/nano12050748

PMID 35269236

发布时间 2022-03-13

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Nanomaterials (Basel, Switzerland)

2022年12卷5期

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Insulation Performance and Simulation Analysis of SiO<sub>2</sub>-Aramid Paper under High-Voltage Bushing.

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Insulation Performance and Simulation Analysis of SiO<sub>2</sub>-Aramid Paper under High-Voltage Bushing.

Nanomaterials (Basel, Switzerland)

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Nanomaterials (Basel, Switzerland)

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