Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy.

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第一作者： Xue,Zhang

第一单位： School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China.

作者： Xue,Zhang ^[1] ; Zhiwei,Xing ^[2] ; Wenxian,Yang ^[1] ; Haibing,Qiu ^[2] ; Ying,Gu ^[2] ; Yuta,Suzuki ^[1] ; Sakuya,Kaneko ^[2] ; Yuki,Matsuda ^[1] ; Shinji,Izumi ^[2] ; Yuichi,Nakamura ^[3] ; Yong,Cai ^[3] ; Lifeng,Bian ^[3] ; Shulong,Lu ^[3] ; Atsushi,Tackeuchi ^[3]

作者单位： School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China. ^[1] Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China. ^[2] Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan. ^[3] Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China. ^[4]

关键词 InGaN quantum dots green light-emitting diode plasma-assisted molecular beam epitaxy self-assembled growth

DOI 10.3390/nano12050800

PMID 35269287

发布时间 2022-03-16

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Nanomaterials (Basel, Switzerland)

2022年12卷5期

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Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy.

Nanomaterials (Basel, Switzerland)

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Nanomaterials (Basel, Switzerland)

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Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy.

Nanomaterials (Basel, Switzerland)

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Nanomaterials (Basel, Switzerland)

相关期刊

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