Field output correction factors and electron fluence perturbation of the microSilicon and microSilicon X detectors.

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作者： Alexia,Delbaere ^[1] ; Tony,Younes ^[2] ; Luc,Simon ^[1] ; Catherine,Khamphan ^[2] ; Laure,Vieillevigne ^[1]

作者单位： Department of Medical Physics, Institut Claudius Regaud - Institut Universitaire du Cancer de Toulouse, F-31059 Toulouse, France. ^[1] Centre de Recherches en Cancérologie de Toulouse, UMR1037 INSERM-Université Toulouse 3-ERL5294 CNRS, Oncopole, F-31037 Toulouse, France. ^[2] Department of Medical Physics, Institut du Cancer-Avignon Provence, F-84000 Avignon, France. ^[3]

关键词 component effects electron fluence perturbation field output correction factors silicon diodes small field dosimetry

主题词电子(Electrons);蒙特卡罗法(Monte Carlo Method);光子(Photons);放射测量术(Radiometry);水(Water)

DOI 10.1088/1361-6560/ac5e5e

PMID 35294937

发布时间 2022-05-06

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