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Fermi-Level Pinning-Free WSe<sub>2</sub> Transistors via 2D Van der Waals Metal Contacts and Their Circuits.

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第一作者： Jisu,Jang

第一单位： Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.;Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea.

作者： Jisu,Jang ^[1] ; Hyun-Soo,Ra ^[2] ; Jongtae,Ahn ^[2] ; Tae Wook,Kim ^[2] ; Seung Ho,Song ^[3] ; Soohyung,Park ^[4] ; Takashi,Taniguch ^[5] ; Kenji,Watanabe ^[5] ; Kimoon,Lee ^[6] ; Do Kyung,Hwang ^[1]

作者单位： Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.;Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea. ^[1] Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea. ^[2] Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.;SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Korea. ^[3] Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea. ^[4] Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan. ^[5] Department of Physics, Kunsan National University, Gunsan, 54150, Republic of Korea. ^[6]

关键词 2D materials Fermi-level pinning Schottky-Mott limit complementary metal-oxide-semiconductors van der Waals contacts

DOI 10.1002/adma.202109899

PMID 35306686

发布时间 2022-05-16

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