Two-Step Deposition of an Ultrathin GaN Film on a Monolayer MoS<sub>2</sub> Template.

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作者： Yimeng,Song ^[1] ; Yangfeng,Li ^[2] ; Yingfeng,He ^[2] ; Huiyun,Wei ^[1] ; Peng,Qiu ^[1] ; Xiaotao,Hu ^[1] ; Zhaole,Su ^[2] ; Yang,Jiang ^[2] ; Mingzeng,Peng ^[2] ; Xinhe,Zheng ^[3]

作者单位： School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China. ^[1] Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. ^[2] Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China. ^[3]

关键词 PEALD mono-MoS2 quality improvement two-step deposition ultrathin GaN

DOI 10.1021/acsami.2c00824

PMID 35377136

发布时间 2022-04-14

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