Comparing three quantification methods on N/Si ratio analysis using electron energy loss spectroscopy (EELS).

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作者： Xue,Rui ^[1] ; Yun-Yu,Wang ^[2] ; Shixin,Wang ^[3] ; Sook Fun,Chan ^[3] ; Qiang,Jin ^[3]

作者单位： Micron Technology Inc., 8000 S Federal Way, Boise, ID 83716, USA. Electronic address: xrui@micron.com. ^[1] Micron Technology Inc., 8000 S Federal Way, Boise, ID 83716, USA. Electronic address: yunyuwang@micron.com. ^[2] Micron Technology Inc., 8000 S Federal Way, Boise, ID 83716, USA. ^[3]

关键词 3D NAND EELS Fourier-log deconvolution Jump ratio Quantitative composition analysis STEM

DOI 10.1016/j.micron.2022.103263

PMID 35390752

发布时间 2022-04-12

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Micron (Oxford, England

2022年157卷

103263页

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Comparing three quantification methods on N/Si ratio analysis using electron energy loss spectroscopy (EELS).

Micron (Oxford, England

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Micron (Oxford, England

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Comparing three quantification methods on N/Si ratio analysis using electron energy loss spectroscopy (EELS).

Micron (Oxford, England

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Micron (Oxford, England

相关期刊

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