Effect of Threading Dislocations on the Electronic Structure of La-Doped BaSnO<sub>3</sub> Thin Films.

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作者： Jeonghun,Kang ^[1] ; Jeong Hyuk,Lee ^[1] ; Han-Koo,Lee ^[2] ; Kwang-Tak,Kim ^[1] ; Jin Hyeok,Kim ^[3] ; Min-Jae,Maeng ^[4] ; Jong-Am,Hong ^[4] ; Yongsup,Park ^[4] ; Kee Hoon,Kim ^[5]

作者单位： Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea. ^[1] Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 37673, Korea. ^[2] Optoelectronic Convergence Research Center, Department of Materials Science and Engineering, Chonnam National University, Gwangju 61185, Korea. ^[3] Department of Physics, Kyung Hee University, Seoul 02447, Korea. ^[4] Department of Information Display, Kyung Hee University, Seoul 02447, Korea. ^[5] Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul 08826, Korea. ^[6]

关键词 bandgap renormalization barium stannate (BaSnO3)perovskite oxide photoemission spectroscopy threading dislocation

DOI 10.3390/ma15072417

PMID 35407749

发布时间 2022-04-15

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