Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide.

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第一作者： Simon,Escobar Steinvall

第一单位： Laboratory of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.;Center for Analysis and Synthesis and NanoLund, Lund University, Box 124, 221 00 Lund, Sweden.

作者： Simon,Escobar Steinvall ^[1] ; Elias Z,Stutz ^[2] ; Rajrupa,Paul ^[2] ; Mahdi,Zamani ^[2] ; Jean-Baptiste,Leran ^[2] ; Mirjana,Dimitrievska ^[2] ; Anna,Fontcuberta I Morral ^[3]

作者单位： Laboratory of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.;Center for Analysis and Synthesis and NanoLund, Lund University, Box 124, 221 00 Lund, Sweden. ^[1] Laboratory of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland. ^[2] Laboratory of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.;Institute of Physics, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland. ^[3]

DOI 10.1021/acsaem.1c02484

PMID 35647493

发布时间 2024-08-28

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ACS applied energy materials

2022年5卷5期

5298-5306页

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Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide.

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Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide.

ACS applied energy materials

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