Atomically Thin Delta-Doping of Self-Assembled Molecular Monolayers by Flash Lamp Annealing for Si-Based Deep UV Photodiodes.

导出 LinkOut

翻译打印收藏纠错

作者： Shannan,Chang ^[1] ; Jiajing,He ^[2] ; Slawomir,Prucnal ^[1] ; Jieyin,Zhang ^[2] ; Jianjun,Zhang ^[3] ; Shengqiang,Zhou ^[4] ; Manfred,Helm ^[4] ; Yaping,Dan ^[3]

作者单位： National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China. ^[1] University of Michigan─Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China. ^[2] Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, Dresden D-01328, Germany. ^[3] National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. ^[4]

关键词 deep UV photodiode delta-doping flash lamp annealing self-assembled molecular monolayer weak localization

DOI 10.1021/acsami.2c04002

PMID 35666627

发布时间 2022-07-07

翻译满意度评价：

准确一般字义偏差语意偏离译文作用小提交